Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

US Patent 11869922 · Granted Jan 9, 2024

Estimated economic value: $312,289,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Optical dimming devices with chiral ferroelectric nematic liquid crystal2025
Multi-color visible light source including integrated VCSELs and integrated phot2025
Multi-color visible light source including integrated VCSELs and integrated phot2025
Dimming devices with pixelated liquid crystal physical gels2025
Visible light source including integrated VCSELs and integrated photonic cavitie2025
Visible light source including integrated VCSELs and integrated photonic cavitie2025
Grin lens structure in micro-LED devices2025
Grin lens structure in micro-LED devices2025
High performance backlight device using photonic integrated circuits2025
Display backplanes with integrated electronics, photonics and color conversion c2025
Display system with tunable wavelength conversion in a nanophotonic periodically2025
High refractive index birefringent organic solid crystal and methods of making t2024