Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)

Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)

US Patent 9418721 · Granted Aug 16, 2016

Estimated economic value: $3,753,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Using an ensemble of data transformers to encode data before zero-value compress2025
Managing power for serverless computing2025
Controlling speculative actions based on a hit/miss predictor2025
Detecting and mitigating false structure sharing within a cache line2025
Stickification using anywhere padding to accelerate data manipulation2025
Systems and methods of exchanging data using a high-speed communication link2025
Padding input data for artificial intelligence accelerators2025
Instruction execution scheduling using a hit/miss predictor2025
Location-aware protection system of latches (LAPS-L)2025
Location-aware protection system of latches (LAPS-L)2025
Single function to perform combined matrix multiplication and bias add operation2025
Safe execution of programs that make out-of-bounds references2025