Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

US Patent 9412867 · Granted Aug 9, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Semiconductor device including gate electrode for applying tensile stress to sil2025
Semiconductor device including gate electrode for applying tensile stress to sil2025
Semiconductor device including gate electrode for applying tensile stress to sil2025
Semiconductor device including gate electrode for applying tensile stress to sil2025
Method of manufacturing semiconductor device2024
Semiconductor device and method of manufacturing the same2023
Semiconductor device and manufacturing method of the same2023
Semiconductor device and method of manufacturing the same2022
Semiconductor device and manufacturing method of the same2020
Semiconductor device and manufacturing method of the same2019
Semiconductor device and method of manufacturing the same2018