Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Filamentary memory devices and methods

Filamentary memory devices and methods

US Patent 9324943 · Granted Apr 26, 2016

Estimated economic value: $9,589,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device having tiers of 2-transistor memory cells2025
Ferroelectric transistors and assemblies comprising ferroelectric transistors2025
Memory device having shared read/write data line for 2-transistor vertical memor2025
Memory device having 2-transistor vertical memory cell and shared channel region2025
Memory device assembly with non-impinged leaker devices2025
Lidar system based on silicon-based integrated magneto-optical circulator2025
Differential storage in memory arrays2025
Transistors and memory arrays2025
Memory device having 2-transistor memory cell and access line plate2025
Apparatus and method including memory device having 2-transistor vertical memory2025
Integrated assemblies and methods of forming integrated assemblies2025
Memory device having 2-transistor vertical memory cell2025