Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High voltage lateral DMOS transistor with optimized source-side blocking capability

High voltage lateral DMOS transistor with optimized source-side blocking capability

US Patent 9299832 · Granted Mar 29, 2016

Estimated economic value: $25,607,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge guard ring with snapback protection2025
Gallium nitride transistor with a doped region2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Trench gate trench field plate vertical MOSFET2024
Trench gate trench field plate vertical MOSFET2024
Superlattice photo detector2024
Gallium nitride transistor with a doped region2023
Electrostatic discharge guard ring with snapback protection2023
Laterally diffused metal oxide semiconductor with gate poly contact within sourc2023
Multi-chip module including stacked power devices with metal clip2022
Hybrid active-field gap extended drain MOS transistor2022