Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › System and method for a field-effect transistor with a raised drain structure

System and method for a field-effect transistor with a raised drain structure

US Patent 9257347 · Granted Feb 9, 2016

Estimated economic value: $1,923,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for automatic generation of device-based design rules and corr2024
Vertical tunneling field-effect transistor cell2024
Method of making gate structure of a semiconductor device2024
Structure and method for vertical tunneling field effect transistor with leveled2024
Front side laser-based wafer dicing2023
Metal gate structure of a CMOS semiconductor device and method of forming the sa2022
Gate structure of a semiconductor device and method of making2022
Structure and method for vertical tunneling field effect transistor with leveled2021
Vertical tunneling field-effect transistor cell and fabricating the same2021
Memory device with density-controllable dummy fill strategy for near-MRAM perip2021
High-K film apparatus and method2020
Fabrication method of a metal gate structure2020