Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective amorphization for electrical signal isolation and linearity in SOI structures

Selective amorphization for electrical signal isolation and linearity in SOI structures

US Patent 8963247 · Granted Feb 24, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a semiconductor structure having a porous semiconductor layer2025
Field effect transistors with reduced leakage current2024
Portable marker for ice hockey2024
Method for manufacturing body-source-tied SOI transistor2023
Body-source-tied semiconductor-on-insulator (SOI) transistor2023
Semiconductor structure having porous semiconductor segment for RF devices and b2021
Semiconductor structure having porous semiconductor layer for RF devices2021
Semiconductor-on-insulator (SOI) device with reduced parasitic capacitance2021
Power handling improvements for phase-change material (PCM) radio frequency (RF)2021
High performance SiGe heterojunction bipolar transistors built on thin-film sili2021
Stacked phase-change material (PCM) radio frequency (RF) switches with improved 2021
Radio frequency (RF) switch with improved power handling2020