Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit using deep trench through silicon (DTS)

Integrated circuit using deep trench through silicon (DTS)

US Patent 8941211 · Granted Jan 27, 2015

Estimated economic value: $4,163,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method, apparatus, and system for positioning electronic device, server, and sto2025
BCD device layout area defined by a deep trench isolation structure and methods 2025
Semiconductor device and method of manufacturing same2025
Semiconductor structures and manufacturing method thereof2025
Multi-function substrate2025
Semiconductor arrangement including first and second gate electrodes and method 2025
Electronic device2025
Manufacturing method of semiconductor device2025
Deep trench isolation structure and method of making the same2025
Interactive video surveillance as an edge service using unsupervised feature que2025
Method for eliminating divot formation and semiconductor device manufactured usi2025
High voltage semiconductor device2025