Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power integrated circuit including series-connected source substrate and drain substrate power MOSFETs

Power integrated circuit including series-connected source substrate and drain substrate power MOSFETs

US Patent 8928075 · Granted Jan 6, 2015

Estimated economic value: $13,374,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid component with silicon and wide bandgap semiconductor material in silicon2025
Hybrid component with silicon and wide bandgap semconductor material2025
Trench gate trench field plate vertical MOSFET2024
Semiconductor on insulator on wide band-gap semiconductor2024
Drain extended transistor with trench gate2023
Semiconductor on insulator on wide band-gap semiconductor2023
Hybrid semiconductor device2023
Multi-chip module including stacked power devices with metal clip2022
Integrated channel diode2022
Active monolithic snubber design2022
Trench gate trench field plate vertical MOSFET2021
Transistor with integrated capacitor2021