Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors

Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors

US Patent 8896048 · Granted Nov 25, 2014

Estimated economic value: $4,423,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mounting device and clamping device for base station antenna2025
Ultrasonic machining an aperture in a workpiece2025
Adaptive surface texturing for ceramic matrix composites2025
RF signal transmission device for base station antenna, phase shifter and base s2025
Systems and methods for ultrasonic repair2025
Joint perception model training method, joint perception method, device, and sto2025
Mobile phone holder2025
Method and apparatus to reduce power consumption of page buffer circuitry in a n2025
Antenna mounting kit for integrated base station antenna2025
Engineered pichia strain and a recombinant method of using the same for making a2025
Controller2025
Controller2025