Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure and method for III-nitride device isolation

Structure and method for III-nitride device isolation

US Patent 8748204 · Granted Jun 10, 2014

Estimated economic value: $3,845,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fabrication of semiconductor device using alternating high and low temperature l2018
Process for manufacture of super lattice using alternating high and low temperat2015
III-nitride monolithic IC2015
Fabrication of III-nitride semiconductor device and related structures2015
III-nitride heterojunction device2015
III-nitride heterojunction device2014
Fabrication of III-nitride semiconductor device and related structures2014
III-nitride semiconductor device with stepped gate2014
III-nitride semiconductor device with trench structure2014
Method for fabricating a semiconductor device2013
Active area shaping for III-nitride devices2013
III-nitride heterojunction device2013