Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Active area shaping for III-nitride devices

Active area shaping for III-nitride devices

US Patent 8536624 · Granted Sep 17, 2013

Estimated economic value: $5,110,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate metal-insulator-field plate metal integrated circuit capacitor and method o2025
III-nitride device2025
Integrated III-nitride and silicon device2023
Field plate structures with patterned surface passivation layers and methods for2021
Lateral power device with reduced on-resistance2021
Method for fast judging and optimizing light emitting quality of light guide pla2021
Integrated circuit with multiple gallium nitride transistor sets2021
Enhancement-mode GaN transistor with selective and nonselective etch layers for 2020
Semiconductor devices with back surface isolation2020
Integrated gallium nitride based DC-DC converter2020
Window air conditioner with side insulating sealing assembly2019
Semiconductor devices with back surface isolation2019