Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereof

Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereof

US Patent 8729609 · Granted May 20, 2014

Estimated economic value: $2,934,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field-effect transistors with heterogenous doped regions in the substrate of a s2025
Lateral bipolar transistor2024
Lateral bipolar junction transistor including a stress layer and method2023
Lateral bipolar transistor2023
Semiconductor device with doped region adjacent isolation structure in extension2021
Methods, apparatus and system for a local interconnect feature over an active re2021
Fin-type field effect transistors with uniform channel lengths and below-channel2020
Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby2019
Tri-gate FinFET device2019
Tall single-fin FIN-type field effect transistor structures and methods2019
Transistors with H-shaped or U-shaped channels and method for forming the same2019
Method of forming complementary nano-sheet/wire transistor devices with same dep2019