Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancement mode normally-off gallium nitride heterostructure field effect transistor

Enhancement mode normally-off gallium nitride heterostructure field effect transistor

US Patent 8728884 · Granted May 20, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated mechanical aids for high accuracy alignable-electrical contacts2025
Wafer-scale direct bonded array core block for an active electronically steerabl2025
Temporary bonding structures for die-to-die and wafer-to-wafer bonding2024
Low cost panel AESA with thermal management2024
Integrated mechanical aids for high accuracy alignable-electrical contacts2023
Dual-band monolithic microwave IC (MMIC) power amplifier2022
Antenna sub-array blocks having heat dissipation2022
Recursive metal embedded chip assembly2019
Monolithic integration of group III nitride epitaxial layers2019
Fabrication of microfluidic channels in diamond2019
T-gate field effect transistor with non-linear channel layer and/or gate foot fa2019
Surface mount package for semiconductor devices with embedded heat spreaders2018