Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Thermally assisted magnetic random access memory element with improved endurance

Thermally assisted magnetic random access memory element with improved endurance

US Patent 8717812 · Granted May 6, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing a spintronic device comprising a thick active magnetic 2025
Method for measuring an external magnetic field by at least one magnetic memory 2025
Magnetic tunnel junction comprising an inhomogeneous granular free layer and ass2024
Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and 2020
Magnetic tunnel junction with an improved tunnel barrier2018
Low power magnetic random access memory cell2018
Thermally assisted multi-level MRAM cell and method for writing a plurality of b2017
Thermally-assisted MRAM cells with improved reliability at writing2017
Magnetic random access memory (MRAM) cell with low power consumption2017
Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal2017
Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal2017
Magnetoresistive element with oxygen getting layer having enhanced exchange bias2016