IP

Ioan Lucian Prejbeanu

CS Crocus Technology Sa: 27 patents #1 of 34Top 3%
CEA: 4 patents #1,058 of 7,956Top 15%
CN CNRS: 3 patents #978 of 11,908Top 9%
IG Institut Polytechnique De Grenoble: 1 patents #62 of 266Top 25%
Overall (All Time): #115,892 of 4,157,543Top 3%
31
Patents All Time

Issued Patents All Time

Showing 1–25 of 31 patents

Patent #TitleCo-InventorsDate
12292486 Method for measuring an external magnetic field by at least one magnetic memory point Ricardo Sousa 2025-05-06
12100437 Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices Bernard Dieny, Marco MANSUETO, Ricardo Sousa, Liliana Buda-Prejbeanu 2024-09-24
10002973 Magnetic tunnel junction with an improved tunnel barrier Celine Portemont, Clarisse Ducruet 2018-06-19
9886989 Low power magnetic random access memory cell Clarisse Ducruet, Celine Portemont 2018-02-06
9754653 Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell 2017-09-05
9728711 Thermally-assisted MRAM cells with improved reliability at writing Sebastien Bandiera 2017-08-08
9679624 Magnetic random access memory (MRAM) cell with low power consumption Lucien Lombard 2017-06-13
9583695 Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal Bernard Dieny, Kenneth Mackay, Bertrand F. Cambou 2017-02-28
9431601 Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devices Sebastien Bandiera 2016-08-30
9396782 Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan Jeremy Alvarez-Herault, Ricardo Sousa 2016-07-19
9336846 MRAM element with low writing temperature Jerome Moritz, Bernard Dieny 2016-05-10
9331268 MRAM element having improved data retention and low writing temperature Bernard Dieny, Clarisse Ducruet, Lucien Lombard 2016-05-03
9324936 Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal Bernard Dieny, Kenneth Mackay, Bertrand F. Cambou 2016-04-26
9165626 Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layers Lucien Lombard 2015-10-20
8988935 Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation Kenneth Mackay 2015-03-24
8971102 MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current Ricardo Sousa 2015-03-03
8885397 Self-referenced MRAM cell with optimized reliability 2014-11-11
8797793 Self-referenced MRAM element with linear sensing signal Lucien Lombard, Kenneth Mackay 2014-08-05
8743597 Self-referenced magnetic random access memory element comprising a synthetic storage layer Lucien Lombard, Quentin Stainer, Kenneth Mackay 2014-06-03
8717812 Thermally assisted magnetic random access memory element with improved endurance Kenneth Mackay 2014-05-06
8659938 Multibit magnetic random access memory cell with improved read margin 2014-02-25
8609439 Magnetic tunnel junction comprising a polarizing layer Ricardo Sousa 2013-12-17
8514618 Magnetic random access memory cell with improved dispersion of the switching field Lucien Lombard 2013-08-20
8503225 Multibit cell with synthetic storage layer Lucien Lombard 2013-08-06
8391053 Magnetic memory with a thermally assisted writing procedure and reduced writing field Clarisse Ducruet 2013-03-05