RS

Ricardo Sousa

CEA: 16 patents #163 of 7,956Top 3%
CN CNRS: 11 patents #79 of 11,908Top 1%
IG Institut Polytechnique De Grenoble: 4 patents #5 of 266Top 2%
CS Crocus Technology Sa: 3 patents #19 of 34Top 60%
UA Universite Grenoble Alpes: 3 patents #21 of 431Top 5%
UP Université Paris-Sud: 1 patents #79 of 307Top 30%
U1 Universite Joseph Fourier—Grenoble 1: 1 patents #31 of 123Top 30%
IG Institut National Polytechnique De Grenoble: 1 patents #18 of 101Top 20%
LS Le Centre National De Larecherche Scientifique: 1 patents #32 of 158Top 25%
TA Talkdesk: 1 patents #17 of 59Top 30%
Overall (All Time): #201,625 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
12292486 Method for measuring an external magnetic field by at least one magnetic memory point Ioan Lucian Prejbeanu 2025-05-06
12100437 Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices Bernard Dieny, Marco MANSUETO, Ioan Lucian Prejbeanu, Liliana Buda-Prejbeanu 2024-09-24
12046268 Cryogenic magnetic device more particularly for logic component or memory Bernard Dieny, Pedro Brandao Veiga, Liliana Buda-Prejbeanu, Hélène Bea, Cécile GREZES 2024-07-23
11856140 Predictive communications system Nuno Oliveira, Carolina Bellani, Gabriela Soares, Mafalda Sá Velho 2023-12-26
11139099 Magnetic field generator Isabelle Joumard 2021-10-05
10978234 Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack Jyotirmoy Chatterjee, Paulo Veloso Coelho, Bernard Dieny, Lucian Prejbeanu 2021-04-13
10930841 Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junction Nicolas Perrissin-Fabert, Bernard Dieny, Lucian Prejbeanu 2021-02-23
10818329 Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction Nicolas Perrissin-Fabert, Bernard Dieny, Lucian Prejbeanu 2020-10-27
10658574 Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer Jyotirmoy Chatterjee, Bernard Dieny, Stephane Auffret 2020-05-19
9455012 Magnetic device with spin polarisation Bernard Dieny, Bertrand Lacoste, Thibaut Devolder 2016-09-27
9396782 Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan Jeremy Alvarez-Herault, Ioan Lucian Prejbeanu 2016-07-19
8971102 MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current Ioan Lucian Prejbeanu 2015-03-03
8958240 Magnetic device with thermally-assisted switching Bernard Dieny 2015-02-17
8947916 Thermally assisted magnetic writing device Bernard Dieny, Jerome Moritz 2015-02-03
8609439 Magnetic tunnel junction comprising a polarizing layer Ioan Lucian Prejbeanu 2013-12-17
8279666 Spin polarised magnetic device Bernard Dieny, Cristian Papusoi, Ursula Ebels, Dimitri Houssameddine, Liliana Buda-Prejbeanu 2012-10-02
7957181 Magnetic tunnel junction magnetic memory Jean-Pierre Nozieres, Bernard Dieny, Olivier Redon, Ioan Lucian Prejbeanu 2011-06-07
7898833 Magnetic element with thermally-assisted writing Lucian Prejbeanu, Cécile Maunoury, Bernard Dieny, Clarisse Ducruet 2011-03-01
7626221 Magnetoresistive random access memory with high current density Bernard Dieny, Olivier Redon 2009-12-01
7480175 Magnetic tunnel junction device and writing/reading for said device Bernard Dieny, Dana Stanescu 2009-01-20
7411817 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same Jean-Pierre Nozieres, Bernard Dieny, Olivier Redon, Ioan Lucian Prejbeanu 2008-08-12