Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing a spintronic device comprising a thick active magnetic layer

Method for manufacturing a spintronic device comprising a thick active magnetic layer

US Patent 12477951 · Granted Nov 18, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for measuring an external magnetic field by at least one magnetic memory 2025
Magnetic tunnel junction comprising an inhomogeneous granular free layer and ass2024
Magnetic tunnel junction comprising an inhomogeneous granular free layer and ass2024
Cryogenic magnetic device more particularly for logic component or memory2024
Magnetic element having an improved measurement range2023
Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising 2021
Magnetic tunnel junction with perpendicular shape anisotropy and minimised varia2021
Magnetic tunnel junction with perpendicular shape anisotropy and minimised varia2020
Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic devic2020
Method for manufacturing a resistive device for a memory or logic circuit2018
Magnetic tunnel junction with an improved tunnel barrier2018
Low power magnetic random access memory cell2018