Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Partial local self boosting for NAND

Partial local self boosting for NAND

US Patent 8638609 · Granted Jan 28, 2014

Estimated economic value: $864,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate fringing effect based channel formation for semiconductor device2024
Gate fringing effect based channel formation for semiconductor device2024
Semiconductor having a source/drain contact with a single inner spacer2024
Devices for providing neutral voltage conditions for resistive change elements i2023
Leakage current reduction in polysilicon-on-active-edge structures2022
Gate fringing effect based channel formation for semiconductor device2022
Gate fringing effect based channel formation for semiconductor device2022
Sense amplifiers2021
Method of controlling verification operations for error correction of non-volati2021
NAND memory cell string having a stacked select gate structure and process for f2021
Contact for semiconductor device2020
NAND memory cell string having a stacked select gate structure and process for f2020