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Home › Making of a microelectronic device including a monocrystalline silicon NEMS component and a transistor the gate of which is made in the same layer as the mobile structure of this component

Making of a microelectronic device including a monocrystalline silicon NEMS component and a transistor the gate of which is made in the same layer as the mobile structure of this component

US Patent 8580597 · Granted Nov 12, 2013

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