Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate

Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate

US Patent 8563442 · Granted Oct 22, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacturing semiconductor device2025
Steam valve2025
Compound semiconductor substrate including nitride semiconductor layer having va2025
Compound semiconductor device, compound semiconductor substrate, and method for 2024
Nonvolatile memory cell, nonvolatile memory cell array, and information writing 2024
Air pump device and seat apparatus2024
Turbine blade and turbine2024
Conductive sheet, touch sensor, and method for manufacturing touch sensor2024
Touch panel2023
Baseball glove2023
Baseball glove2023
Semiconductor device and imaging unit2022