Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming SiC MOSFETs with high inversion layer mobility

Methods of forming SiC MOSFETs with high inversion layer mobility

US Patent 8536066 · Granted Sep 17, 2013

Estimated economic value: $15,629,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor switching based on voltage sensing2025
Power semiconductor device with reduced strain2024
High speed, efficient SiC power module2024
IC including capacitor having segmented bottom plate2024
High speed, efficient sic power module2024
Power semiconductor device with reduced strain2024
Power semiconductor devices having gate trenches and buried edge terminations an2023
Transistor switching based on voltage sensing2023
IC including capacitor having segmented bottom plate2023
Semiconductor power devices having gate dielectric layers with improved breakdow2022
Power switching devices with high dV/dt capability and methods of making such de2021
Low switching loss high performance power module2021