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Home › Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

US Patent 8507304 · Granted Aug 13, 2013

Estimated economic value: $15,679,000 ⓘ

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