Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gated diode memory cells

Gated diode memory cells

US Patent 8445946 · Granted May 21, 2013

Estimated economic value: $6,083,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fully-depleted CMOS transistors with u-shaped channel2021
Structure and method for improving access resistance in U-channel ETSOI2019
Method of lateral oxidation of nFET and pFET high-K gate stacks2019
Fully-depleted CMOS transistors with U-shaped channel2019
FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spa2018
Method of lateral oxidation of NFET and PFET high-k gate stacks2018
Semiconductor device including dual-layer source/drain region2017
Semiconductor device including dual-layer source/drain region2017
Fully-depleted SOI MOSFET with U-shaped channel2017
Structure and method for adjusting threshold voltage of the array of transistors2017
Methods of forming FINFETs with locally thinned channels from fins having in-sit2017
Fully-depleted SOI MOSFET with U-shaped channel2017