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Home › Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding

Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding

US Patent 9627378 · Granted Apr 18, 2017

Estimated economic value: $1,813,000 ⓘ

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