Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Monolayer dopant embedded stressor for advanced CMOS

Monolayer dopant embedded stressor for advanced CMOS

US Patent 8421191 · Granted Apr 16, 2013

Estimated economic value: $3,567,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Lateral phototransistor2025
Semiconductor-on-insulator field-effect transistors including stress-inducing co2025
Methods of correlating zones of processing chambers, and related systems and met2025
IC device with vertically-graded silicon germanium region adjacent device channe2025
Graded superlattice structure for gate all around devices2025
Scalable and customizable computation using a modularized code architecture2025
Lateral bipolar transistors2025
Lateral bipolar transistors with gate structure aligned to extrinsic base2025
Method for forming silicon-phosphorous materials2025
Heterojunction bipolar transistors with a cut stress liner2025
Lateral bipolar transistor with gated collector2025