Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Faceted EPI shape and half-wrap around silicide in S/D merged FinFET

Faceted EPI shape and half-wrap around silicide in S/D merged FinFET

US Patent 8362574 · Granted Jan 29, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with biofet and biometric sensors2025
Gate-all-around integrated circuit structures having devices with channel-to-sub2025
Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to 2025
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures2025
Substrate-free integrated circuit structures2025
Gate-all-around integrated circuit structures having insulator substrate2025
Gate-all-around integrated circuit structures having devices with source/drain-t2025
Gate-all-around integrated circuit structures having adjacent structures for sub2025
Substrate-less electrostatic discharge (ESD) integrated circuit structures2024
Gate-all-around integrated circuit structures having devices with source/drain-t2024
Gate-all-around integrated circuit structures including varactors2024
Gate-all-around integrated circuit structures having adjacent deep via substrate2023