Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor on glass substrate with stiffening layer and process of making the same

Semiconductor on glass substrate with stiffening layer and process of making the same

US Patent 8357974 · Granted Jan 22, 2013

Estimated economic value: $26,554,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for forming a handling substrate for a composite structure intended for R2025
Methods of forming SOI substrates2025
Heterostructure and method of fabrication2024
Diode and method of making the same2024
Methods of forming SOI substrates2023
High resistivity semiconductor-on-insulator wafer and a method of manufacture2023
Heterostructure and method of fabrication2023
Heterostructure and method of fabrication2023
Method for manufacturing a semiconductor on insulator type structure by layer tr2022
Method for manufacturing a structure for forming a tridimensional monolithic int2021
High resistivity semiconductor-on-insulator wafer and a method of manufacturing2021
Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with sma2021