Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films

Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films

US Patent 8349633 · Granted Jan 8, 2013

Estimated economic value: $6,763,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High voltage gallium nitride vertical PN diode2025
High voltage gallium nitride vertical PN diode2025
Wound-care composition and method of use2024
Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectr2023
Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectr2023
Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectr2021
Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectr2021
Regrowth method for fabricating wide-bandgap transistors, and devices made there2020
Regrowth method for fabricating wide-bandgap transistors, and devices made there2019
Diode and method of making the same2018
Vertical III-nitride thin-film power diode2017
Selective layer disordering in III-nitrides with a capping layer2016