Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

US Patent 11715635 · Granted Aug 1, 2023

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg ref2025
Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg ref2025
Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg ref2025
Devices comprising distributed bragg reflectors and methods of making the device2025
Devices comprising distributed bragg reflectors and methods of making the device2025
Devices comprising distributed bragg reflectors and methods of making the device2025
High voltage gallium nitride vertical PN diode2025
High voltage gallium nitride vertical PN diode2025
High voltage gallium nitride vertical PN diode2025
Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lith2024
Wound-care composition and method of use2024
Method of fabricating broad-band lattice-matched omnidirectional distributed Bra2023