Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum

Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum

US Patent 8343837 · Granted Jan 1, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC structure with MFMIS memory cell and CMOS transistor2025
Structures for a ferroelectric field-effect transistor and related methods2024
Structures for a ferroelectric field-effect transistor and related methods2024
Structures for a ferroelectric field-effect transistor and related methods2024
Structure including a cross-bar router and method2024
Valve device2021
Buffer-based update of state data2020
Valve mechanism for controlling a fluid, in particular an abrasive high-viscosit2020
Transistor element including a buried insulating layer having enhanced functiona2019
Communicating optical signals between stacked dies2019
Flash memory device2019
Ferro-FET device with buried buffer/ferroelectric layer stack2018