Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and system for providing contact to a first polysilicon layer in a flash memory device

Method and system for providing contact to a first polysilicon layer in a flash memory device

US Patent 8329530 · Granted Dec 11, 2012

Estimated economic value: $1,154,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Disk writing mode providing main pole relaxation2025
Disk writing mode with timing control of main pole relaxation2024
Disk writing mode providing main pole relaxation2024
Pulse-based writing for magnetic storage media2023
Pulse-based writing for magnetic storage media2022
Thermal compensation for heat assisted magnetic recording2022
Pulse-based writing for magnetic storage media2021
Thermal compensation for laser in heat assisted magnetic recording2021
Pulse-based writing for magnetic storage media2020
Integrated circuit with metal and semi-conducting gate2014
Method and system for providing contact to a first polysilicon layer in a flash 2013
Method and system for providing contact to a first polysilicon layer in a flash 2013