Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition

Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition

US Patent 8324091 · Granted Dec 4, 2012

Estimated economic value: $1,677,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structures for a ferroelectric field-effect transistor and related methods2024
Structures for a ferroelectric field-effect transistor and related methods2024
Valve device2021
Valve mechanism for controlling a fluid, in particular an abrasive high-viscosit2020
Front-end-of-line device structure and method of forming such a front-end-of-lin2019
Short-channel NFET device2018
Integrated circuits and methods of forming the same with effective dummy gate ca2018
Short-channel nFET device2017
Three-dimensional flow-optimized control slider system with linear control behav2017
Method of forming a semiconductor structure including silicided and non-silicide2017
Methods and compositions for the treatment of cancer and infectious disease usin2017
Frame element, aircraft component assembly system and method of fitting a compon2016