Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › System for forming SiC crystals having spatially uniform doping impurities

System for forming SiC crystals having spatially uniform doping impurities

US Patent 8216369 · Granted Jul 10, 2012

Estimated economic value: $8,588,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Universal access layer for accessing heterogeneous data stores2024
Distributed processing to provide transparency in rate determination2024
System, method, and computer program product for segmenting accounts2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Canonical model for product development2024
Method for preparing an aluminum doped silicon carbide crystal by providing a co2024
Method for preparing an aluminum doped silicon carbide crystal by providing a co2024
Large diameter silicon carbide single crystals and apparatus and method of manuf2024
Large diameter silicon carbide single crystals and apparatus and method of manuf2024
SiC single crystal sublimation growth apparatus2023
SiC single crystal sublimation growth apparatus2023