Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices

Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices

US Patent 8143123 · Granted Mar 27, 2012

Estimated economic value: $2,384,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid component with silicon and wide bandgap semiconductor material in silicon2025
Hybrid component with silicon and wide bandgap semconductor material2025
LDMOS with self-aligned body and hybrid source2024
Semiconductor on insulator on wide band-gap semiconductor2024
Vertical trench gate MOSFET with integrated Schottky diode2023
MOSFET transistors with hybrid contact2023
Drain extended transistor with trench gate2023
Semiconductor package having wettable lead flank and method of making the same2023
Semiconductor on insulator on wide band-gap semiconductor2023
Hybrid semiconductor device2023
LDMOS with self-aligned body and hybrid source2022
Integrated channel diode2022