Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

US Patent 8120124 · Granted Feb 21, 2012

Estimated economic value: $3,918,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure including two shielding layers and manufacturing method 2025
Storage cell and data read/write method and storage array thereof2025
Methods for silicon carbide gate formation2025
Method for manufacturing memory using pseudo bit line structures and sacrificial2024
Semiconductor device and method of forming same2024
Semiconductor structure and method of forming the same, memory and method of for2024
Semiconductor structure and forming method thereof2024
Method of manufacturing semiconductor structure and semiconductor structure2024
Semiconductor structure and method for forming the same, and memory and method f2024
Method of manufacturing semiconductor structure2024
Method for manufacturing memory and same2024
Manufacturing method of a memory and a memory2024