Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual frequency low temperature oxidation of a semiconductor device

Dual frequency low temperature oxidation of a semiconductor device

US Patent 8043981 · Granted Oct 25, 2011

Estimated economic value: $16,484,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Growth of thin oxide layer with silicon nitride and conversion2025
Methods of selective oxidation on rapid thermal processing (RTP) chamber with ac2025
Dual pressure oxidation method for forming an oxide layer in a feature2025
Method of linearized film oxidation growth2025
Processing system and method of delivering a reactant gas2024
Machine-learning based system for virtual flow metering2024
Chemical mechanical polishing for copper dishing control2024
Selective oxidation on rapid thermal processing (RTP) chamber with active steam 2024
Chamber inlet2024
Asymmetric injection for better wafer uniformity2024
Steam oxidation initiation for high aspect ratio conformal radical oxidation2024
Method for processing a substrate by oscillating a boundary layer of the flow of2023