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Home › Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

US Patent 8013371 · Granted Sep 6, 2011

Estimated economic value: $2,341,000 ⓘ

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