Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process

Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process

US Patent 8012255 · Granted Sep 6, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for manufacturing defect-free monocrystalline silicon cryst2025
Apparatus and method for double-side polishing work2023
Apparatus and method for double-side polishing work2023
Method and apparatus for measuring transmittance of quartz crucible2023
Method and apparatus for manufacturing defect-free monocrystalline silicon cryst2023
Method of evaluating inner circumference of quartz crucible and quartz crucible 2022
Semiconductor wafer placement position determination method and semiconductor ep2021
Silicon single crystal manufacturing method2019
Methods and systems for preventing unsafe operations2019
Semiconductor wafer evaluation standard setting method, semiconductor wafer eval2019
Systems and methods for performing phase shift interferometry while a wafer is v2018
Methods and systems for preventing unsafe operations2018