Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming an OHMIC contact on a P-type 4H-SIC substrate

Method of forming an OHMIC contact on a P-type 4H-SIC substrate

US Patent 8008180 · Granted Aug 30, 2011

Estimated economic value: $916,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Recording apparatus, and method for controlling recording apparatus2025
Printing apparatus having drying unit and drying control method2025
Semiconductor device comprising crystalline oxide semiconductor layer and semico2025
Compound superconducting twisted wire and rewinding method for compound supercon2025
Superconducting coil, method for producing same, and superconducting rectangular2025
Semiconductor device and semiconductor system including semiconductor device2024
Semiconductor device including one or more p-type semiconductors provided betwee2024
Semiconductor device and semiconductor system including semiconductor device2024
Insulation-coated compound superconducting wire and rewinding method thereof2024
Semiconductor apparatus2023
Manufacturing method of semiconductor device including semiconductor element of 2023
Semiconductor apparatus2023