Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11522055 | Stack comprising single-crystal diamond substrate | Shinya Ohmagari, Hideaki Yamada, Hitoshi Umezawa, Nobuteru Tsubouchi, Akiyoshi Chayahara +3 more | 2022-12-06 |
| 9903047 | Production method of SiC crystal | Yukari Ishikawa | 2018-02-27 |
| 9873955 | Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid | — | 2018-01-23 |
| 9587327 | Method of production of sic single crystal | Katsunori Danno, Hiroaki Saitoh, Yoichiro Kawai | 2017-03-07 |
| 9508802 | Gettering process for producing semiconductor device | Katsunori Danno, Hiroaki Saitoh, Tsunenobu Kimoto | 2016-11-29 |
| 9157171 | Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of same | Yasuyuki Fujiwara | 2015-10-13 |
| 8716121 | Ohmic electrode and method of forming the same | Masahiro Sugimoto, Akira Kawahashi, Yasuo Takahashi, Masakatsu Maeda | 2014-05-06 |
| 8633101 | Semiconductor device and manufacturing method of semiconductor device | Masahiro Sugimoto, Akira Kawahashi, Yasuo Takahashi, Masakatsu Maeda | 2014-01-21 |
| 8470698 | Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal | Yasuyuki Fujiwara | 2013-06-25 |
| 8399888 | P-type SiC semiconductor | Hiroaki Saitoh, Tsunenobu Kimoto | 2013-03-19 |
| 8338833 | Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same | Yukari Tani, Noriyoshi Shibata | 2012-12-25 |
| 8053784 | Silicon carbide semiconductor device and method for manufacturing the same | Yukari Tani, Noriyoshi Shibata | 2011-11-08 |
| 8008180 | Method of forming an OHMIC contact on a P-type 4H-SIC substrate | Yasuo Takahashi, Masakatsu Maeda, Akira Kawahashi, Masahiro Sugimoto | 2011-08-30 |
| 7879705 | Semiconductor devices and manufacturing method thereof | Akira Kawahashi, Masahiro Sugimoto, Masakatsu Maeda, Yasuo Takahashi | 2011-02-01 |
| 7678671 | Method of forming epitaxial SiC using XPS characterization | Yukari Tani, Noriyoshi Shibata | 2010-03-16 |
| 5994725 | MOSFET having Schottky gate and bipolar device | Toyokazu Ohnishi | 1999-11-30 |
| 5773334 | Method of manufacturing a semiconductor device | Toyokazu Ohnishi | 1998-06-30 |
| 5604761 | Layered semiconductor laser having solder laminations and method of making same | Toyokazu Ohnishi, Jiro Nakano, Takahide Sugiyama, Kazuyoshi Tomita, Hiroyuki Kano | 1997-02-18 |
| 5553089 | Semiconductor laser stack with lens and method of manufacturing the same | Toyokazu Ohnishi, Jiro Nakano | 1996-09-03 |
| 5491106 | Method for growing a compound semiconductor and a method for producing a semiconductor laser | Hiroyuki Hosoba, Toshio Hata, Masafumi Kondo, Takahiro Suyama, Sadayoshi Matsui | 1996-02-13 |
| 5452316 | Semiconductor laser having stacked active layers with reduced drive voltage | Toyokazu Ohnishi, Jiro Nakano | 1995-09-19 |
| 5365536 | Semiconductor laser | — | 1994-11-15 |
| 5111470 | Semiconductor laser device and a method of fabricating the same | Hiroyuki Hosoba, Toshio Hata, Masafumi Kondou, Takahiro Suyama, Sadayoshi Matsui | 1992-05-05 |
| 5070510 | Semiconductor laser device | Fumihiro Konushi, Hiroshi Nakatu, Kazuhiko Inoguchi, Toshiyuki Okumura, Haruhisa Takiguchi +3 more | 1991-12-03 |
| 5016065 | Compound semiconductor substrate with InGaP layer | Fumihiro Knoushi, Jun Kudo, Masayoshi Koba | 1991-05-14 |