Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns

Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns

US Patent 7997002 · Granted Aug 16, 2011

Estimated economic value: $4,692,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Rapid drought monitoring and identification method for winter wheat based on UAV2025
Measurement recipe optimization based on probabilistic domain knowledge and phys2022
Process control metrology2022
Process robust overlay metrology based on optical scatterometry2020
Multi-location metrology2019
Signal response metrology for image based and scatterometry overlay measurements2019
Measurement of small box size targets2018
Method for electron beam-initiated coating for application of transmission elect2007
High resolution cross-sectioning of polysilicon features with a dual beam tool2006
Metrology process for enhancing image contrast2005
Method to obtain transparent image of resist contact hole or feature by SEM with2004
Method and apparatus for reducing track misregistration due to digital-to-analog2002