Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit

Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit

US Patent 7977236 · Granted Jul 12, 2011

Estimated economic value: $2,990,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System for predicting properties of structures, imager system, and related metho2025
Microelectronic devices including stack structures having doped interfacial regi2025
Integrated circuitry, comprising a pair of opposing lateral projections in insul2025
Memory arrays comprising strings of memory cells and methods used in forming a m2025
Microelectronic devices with a polysilicon structure above a staircase structure2025
Integrated assemblies, and methods of forming integrated assemblies2024
Memories having vertically stacked conductive filled structures2024
Assemblies which include wordlines having a first metal-containing material at l2024
Microelectronic devices including memory cell structures, and related methods an2024
Assemblies having conductive structures with three or more different materials2024
Three dimensional memory2024
Integrated assemblies, and methods of forming integrated assemblies2024