Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for fabricating a substrate of the silicon-on-insulator type with reduced roughness and uniform thickness

Process for fabricating a substrate of the silicon-on-insulator type with reduced roughness and uniform thickness

US Patent 7939427 · Granted May 10, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process for manufacturing a semiconductor substrate, and semiconductor substrate2018
Process for manufacturing a composite structure2017
Method for transferring a layer from a single-crystal substrate2017
Process for treating a semiconductor-on-insulator structure for improving thickn2015
Process for thinning the active silicon layer of a substrate of “silicon on insu2015
Progressive trimming method2014
Treatment for bonding interface stabilization2013
Finishing method for a silicon on insulator substrate2013
Process for the transfer of a thin layer formed in a substrate with vacancy clus2012
Treatment for bonding interface stabilization2012
Method for fabricating a semiconductor on insulator substrate with reduced Secco2011
Method of reducing the surface roughness of a semiconductor wafer2011