Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench isolation comprising process having multiple gate dielectric thicknesses and integrated circuits therefrom

Trench isolation comprising process having multiple gate dielectric thicknesses and integrated circuits therefrom

US Patent 7888196 · Granted Feb 15, 2011

Estimated economic value: $6,555,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge guard ring with snapback protection2025
Electrostatic discharge guard ring with snapback protection2025
Gallium nitride transistor with a doped region2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Trench gate trench field plate vertical MOSFET2024
Superlattice photo detector2024
Trench shield isolation layer2023
Gallium nitride transistor with a doped region2023
Electrostatic discharge guard ring with snapback protection2023
Electrostatic discharge guard ring with snapback protection2023