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Home › Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

US Patent 7767546 · Granted Aug 3, 2010

Estimated economic value: $4,325,000 ⓘ

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