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Home › CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor

CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor

US Patent 7723174 · Granted May 25, 2010

Estimated economic value: $6,565,000 ⓘ

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