Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a guard ring or contact to an SOI substrate

Method of forming a guard ring or contact to an SOI substrate

US Patent 7718514 · Granted May 18, 2010

Estimated economic value: $4,666,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for providing a low-k spacer2019
Low resistance and defect free epitaxial semiconductor material for providing me2016
Low resistance and defect free epitaxial semiconductor material for providing me2016
Field effect device with reduced thickness gate2013
Automated generation of oxide pillar slot shapes in silicon-on-insulator formati2013
Method of forming a guard ring or contact to an SOI substrate2011
Method of forming a guard ring or contact to an SOI substrate2011
Method of forming a guard ring or contact to an SOI substrate2011
Semiconductor device structure having low and high performance devices of same c2010
Semiconductor structure for low parasitic gate capacitance2010
Poly filled substrate contact on SOI structure2009
Self-aligned dual stressed layers for NFET and PFET2009