Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Metal hard mask method and structure for strained silicon MOS transistors

Metal hard mask method and structure for strained silicon MOS transistors

US Patent 7709336 · Granted May 4, 2010

Estimated economic value: $2,815,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

MSECT-4 molecular sieves with off and ERI topologies, preparation method therefo2024
Preparation method for accurate pattern of integrated circuit2023
Virtual imaging method and display for real world scenes2021
Nano-tube MOSFET technology and devices2020
Process method and structure for high voltage MOSFETs2020
MOSFET device and fabrication2020
Semiconductor power devices manufactured with self-aligned processes and more re2020
Nanotube semiconductor devices2020
Computing device for data managing and decision making2020
TSV interconnect structure and manufacturing method thereof2019
Fabrication of shielded gate trench MOSFET with increased source-metal contact2019
Termination structure for nanotube semiconductor devices2019