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Home › Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture

Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture

US Patent 7700436 · Granted Apr 20, 2010

Estimated economic value: $2,608,000 ⓘ

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